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부품번호 | CS3N40A3H 기능 |
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기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS3N40 A3H
○R
General Description:
VDSS
400 V
CS3N40 A3H, the silicon N-channel Enhanced ID
3A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 30 W
which reduce the conduction loss, improve switching
RDS(ON)TYP
2.8 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤3.4Ω)
l Low Gate Charge (Typical Data:5nC)
l Low Reverse transfer capacitances(Typical:4.5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of LCD Power and adaptor.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
400
3
1.8
12
±30
50
6.4
1.2
5
30
0.24
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RE SOURCES HUAJI NG MI CROELECTR ONI CS CO., LTD.
Page 1 of 10 2015V01
Characteristics Curve:
100
CS3N40 A3H
40
○R
10
1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0 .1 TJ=MAX RATED
TC=25℃ Single Pulse
100μs
1 ms
100ms
DC
30
20
10
0 .0 1
1 10 100 1000
V ds , D rain-to-So urce V oltage , V olts
Figure 1 Maximum Forward Bias Safe Operating Area
3.0
1.5
0
0 25 50 75 100 125 150
TC, CaseTemperature, C
Figure 2 Maximum Power Dissipation vs Case Temperature
4 PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
VGS=15V
3
VGS=7V
2
VGS=6V
VGS=6.5V
1 VGS=5.5V
VGS=4.5V
00
0 25 50 75 100 125 150 0 5 10 15 20
TC , Case Temperature , C
Vds , Drain-to-Source Voltage , Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
1
50%
20%
0.1 10%
5%
0.01
Single pulse
0.001
0.00001
2%
1%
PDM
t1
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
0.1
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pa g e 4 of 10 20 15V01
25
1
4페이지 CS3N40 A3H
Test Circuit and Waveform
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 7 of 10 2 015V01
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
CS3N40A3H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |