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CS8N70FA9H2-G 데이터시트 PDF




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부품번호 CS8N70FA9H2-G 기능
기능 Silicon N-Channel Power MOSFET
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CS8N70FA9H2-G 데이터시트, 핀배열, 회로
Silicon N-Channel Power MOSFET
CS8N70F A9H2-G
R
General Description
CS8N70F A9H2-G , the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson1.3)
l Low Gate Charge (Typical Data:35.9nC)
l Low Reverse transfer capacitances(Typical:11.2pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
700
8
48
1
Rating
700
8
5.6
32
±30
210
30
2.5
5.0
48
0.38
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 7 201 5V01




CS8N70FA9H2-G pdf, 반도체, 판매, 대치품
Test Circuit and Waveform
CS8N70F A9H2-G
R
WUXI CHI NA RESO UR CES HUAJI NG M I CROELECTRONI CS C O., LTD. Pa g e 4 of 7 2015V01

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CS8N70FA9H2-G 전자부품, 판매, 대치품
CS8N70F A9H2-G
R
The name and content of poisonous and harmful material in products
Parts Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit
0.1%
0.1%
0.01%
0.1%
0.1%
0.1%
Lead Frame
○ ○○ ○○○
Molding Compound
Chip ○ ○ ○ ○ ○ ○
Wire Bonding
○ ○○ ○○○
Solder
× ○○ ○○○
○:means the hazardous material is under the criterion of SJ/T11363-2006.
×:means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroups RoHS.
Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested to be
used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness of the
heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect the
device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
AddNo.14 Liangxi RD. Wuxi, Jiangsu, China Mail:214061
http://www. crhj.com.cn
HTU UTH
Tel: +86 0510-85807228 Fax: +86- 0510-85800864
Marketing Part
Post214061
Tel+86 0510-81805277/81805336
Fax: +86 0510-85800360/85803016
Application and ServicePost214061 Tel / Fax+86- 0510-81805243/81805110
WUXI CHI NA RESOUR CES HUAJ I NG M I CROELECTRONI CS CO., LTD. Pag e 7 of 7 201 5V0 1

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부품번호상세설명 및 기능제조사
CS8N70FA9H2-G

Silicon N-Channel Power MOSFET

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