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PDF CS10N65A8R Data sheet ( Hoja de datos )
| Número de pieza | CS10N65A8R | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
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Silicon N-Channel Power MOSFET
CS10N65 A8R
○R
General Description：
CS10N65 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
650 V
10 A
130 W
0.86 Ω
l Low ON Resistance(Rdson≤1.0Ω)
l Low Gate Charge (Typical Data:32nC)
l Low Reverse transfer capacitances(Typical:7pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
650
10
6.3
40
±30
500
5.0
130
1.04
150，–55 to 150
300
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 page  
CS10N65 A8R
○R
18
250us Pulse Test
15 VDS=20V
12
16
12
9
6 +25℃
+150℃
3
8
+150℃
+25℃
4
0
2468
Vgs , Gate to Source Voltage , Volts
Figure 6 Typical Transfer Characteristics
1.2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
1.1
1
VGS=10V
10
0.9
0.8
0369
Id , Drain Current , Amps
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
12
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=5A
1.75
1.5
1.25
1
0.75
0.5
-50
0 50 100
Tj, Junction temperature , C
150
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS10N65A8R.PDF ] | |
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