|
|
Número de pieza | CS10N60A8R | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CS10N60A8R (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Silicon N-Channel Power MOSFET
CS10N60 A8R
○R
General Description:
CS10N60 A8R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features:
l Fast Switching
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
600 V
10 A
130 W
0.68 Ω
l Low ON Resistance(Rdson≤0.9Ω)
l Low Gate Charge (Typical Data:32nC)
l Low Reverse transfer capacitances(Typical:7.5pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
600
10
6.3
40
±30
580
5.0
130
1.04
150,–55 to 150
300
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 page CS10N60 A8R
○R
18
250us Pulse Test
15 VDS=20V
12
16
12
9
6 +25℃
+150℃
3
8
+150℃
+25℃
4
0
2468
Vgs , Gate to Source Voltage , Volts
Figure 6 Typical Transfer Characteristics
1.2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
1.05
0.9
VGS=10V
10
0.75
0.6
0369
Id , Drain Current , Amps
Figure 8 Typical Drain to Source ON Resistance
vs Drain Current
12
0
0 0.2 0.4 0.6 0.8 1 1.2
Vsd , Source - Drain Voltage , Volts
Figure 7 Typical Body Diode Transfer Characteristics
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=5A
1.75
1.5
1.25
1
0.75
0.5
-50
0 50 100
Tj, Junction temperature , C
150
Figure 9 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS10N60A8R.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS10N60A8HD | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS10N60A8R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |