CS6N90A8H Datasheet PDF - Huajing Microelectronics
| Part Number | CS6N90A8H | |
| Description | Silicon N-Channel Power MOSFET | |
| Manufacturers | Huajing Microelectronics | |
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Silicon N-Channel Power MOSFET
CS6N90 A8H
○R
General Description：
CS6N90 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤2.3Ω )
l Low Gate Charge (Typical Data:34nC)
l Low Reverse transfer capacitances(Typical:11pF)
l 100% Single Pulse avalanche energy Test
Applications：
ATX Power、LED Power.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
900 V
6A
120 W
1.85 Ω
Rating
900
6
4
24
±30
120
20
2
5.0
120
0.96
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
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CS6N90 A8H
○R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximum Peak Current Capability
6
4.5
3
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 6A
ID=3A
ID= 1.5A
4 1.5
2
0
02
Figure 7
4 6 8 10
Vgs , Gate to Source Voltage ， Volts
Typical Transfer Characteristics
2.4
PULSED TEST
Tc =25 ℃
2.2
2.0 VGS=10V
1.8
0
12 4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=3A
2
1.5
1
1.6 0.5
1.4
0
1
Figure 9
2345
Id , Drain Current , Amps
Typical Drain to Source ON Resistance
vs Drain Current
6
0
-100
-50
Figure
0 50 100 150 200
Tj, Junction temperature ,C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CS6N90A8H electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CS6N90A8H.PDF Datasheet ] | |
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| CS6N90A8H | The function is Silicon N-Channel Power MOSFET. Huajing Microelectronics | |
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