CS5N90FA9H Datasheet PDF - Huajing Microelectronics
| Part Number | CS5N90FA9H | |
| Description | Silicon N-Channel Power MOSFET | |
| Manufacturers | Huajing Microelectronics | |
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Silicon N-Channel Power MOSFET
CS5N90F A9H
○R
General Description：
CS5N90F A9H, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various power
switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the
RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤2.5Ω )
l Low Gate Charge (Typical Data:31nC)
l Low Reverse transfer capacitances(Typical:10pF)
l 100% Single Pulse avalanche energy Test
Applications：
ATX Power、LED Power.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
900
5
45
2.1
Rating
900
5
3.2
20
±30
250
20
2
5.0
45
0.36
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
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CS5N90F A9H
○R
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
8
6
4
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 5A
ID=2.5A
ID= 1.25A
4
2
0
02
Figure 7
4 6 8 10
Vgs , Gate to Source Voltage ， Volts
Typical Transfer Characteristics
2.6
PULSED TEST
Tc =25 ℃
2.4
2
0
12 4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=2.5A
2
2.2 VGS=10V
1.5
2
1
1.8 0.5
1.6
012345
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
6
0
-100
-50
Figure
0 50 100 150 200
Tj, Junction temperature ,C
10 Typical Drian to Source on Resistance
vs Junction Temperature
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10 2015V01
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CS5N90FA9H electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CS5N90FA9H.PDF Datasheet ] | |
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