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PDF CS3N90A4H Data sheet ( Hoja de datos )
| Número de pieza | CS3N90A4H | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS3N90 A4H
○R
General Description：
CS3N90 A4H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤5.5Ω)
l Low Gate Charge (Typical Data: 16nC)
l Low Reverse transfer capacitances(Typical: 5pF)
l 100% Single Pulse avalanche energy Test
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
900 V
3A
75 W
5Ω
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
900
3
1.9
12
±30
125
12
1.5
5.0
75
0.6
3000
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 20 15V0 1
1 page  
CS3N90A4H
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 20 15V0 1
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS3N90A4H.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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