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PDF CS2N80A3HY Data sheet ( Hoja de datos )
| Número de pieza | CS2N80A3HY | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS2N80 A3HY
○R
General Description：
VDSS
800 V
CS2N80 A3HY, the silicon N-channel Enhanced ID
2.0 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
4.8 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251, which accords with the RoHS standard..
Features：
l Fast Switching
l Low Gate Charge (Typical Data:12nC)
l Low Reverse transfer capacitances(Typical:4.0pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
VDSS
ID
IDMa1
VGS
EAS a2
IAS a2
dv/dt a3
PD
TJ，Tstg
TL
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
800
2.0
Figure3
Figure6
±30
82
Figure8
5
40
0.32
150，–55 to 150
300
Units
V
A
A
A
V
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 2015V01
1 page  
CS2N80 A3HY
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 1 0 2015 V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS2N80A3HY.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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