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부품번호 | CS1N80A3H 기능 |
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기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS1N80 A3H
○R
General Description:
CS1N80 A3H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
800
1
30
12
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤15Ω)
l Low Gate Charge (Typical Data:6.7nC)
l Low Reverse transfer capacitances(Typical:2.6pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
800
1.0
0.65
4.0
±30
60
6
1.1
5.0
30
0.24
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 10 20 15V0 1
CS1N80 A3H
○R
Characteristics Curve:
10
35
30
10μs
1
10ms
20
0.1 DC 100ms
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0.01
TJ=150℃
TC=25℃
Single Pulse
0.001
1
10 100 1000
Vds,Drain-to-source Voltage,Volts
Figure 1 Maximun Forward Bias Safe Operating Area
1.2
1.0
0.8
0.6
10
0
0 25 50 75 100 125 150
Tc , Case Temperature , C
Figure 2 Maximun Power Dissipation vs Case Temperature
1.6
1.4 VGS=10V
1.2
VGS=9V
1
VGS=8V
0.8
0.4 0.6
0.4
0.2
0.2
0
0 25 50 75 100 125 150
Tc , Case Temperature ,C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
50%
20%
0.1 10%
5%
0
0
VGS=6V
VGS=5V
5 10 15 20 25
Vds,Drain Source Voltage,Volts
Figure 4 Typical Output Characteristics
30
0.01
0.001
2%
1%
PDM
t1
t2
0.0001
Single pulse
0.00001
0.00001
0.0001
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.001
0.01
0.1
1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
10
100
WUXI CHI NA RESOUR CES HUAJ I NG MI CROELECTRONI CS CO., LTD. Pa ge 4 of 1 0 2 015V01
4페이지 CS1N80 A3H
TestCircuitandWaveform
○R
WUXI CHINA RESOUR CES HUAJI NG MI CROELECTRONI CS CO., LTD. Pa ge 7 of 1 0 2 015V01
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ CS1N80A3H.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
CS1N80A3H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |