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부품번호 | CS2N70FA9 기능 |
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기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS2N70F A9
○R
General Description:
VDSS
700 V
CS2N70F A9, the silicon N-channel Enhanced
ID
2A
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
27
W
which reduce the conduction loss, improve switching
RDS(ON)Typ
4.7 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-220F,
which accords with the RoHS standard..
Features:
l Fast Switching
l Low ON Resistance(Rdson≤6.5Ω)
l Low Gate Charge (Typical Data:8.5nC)
l Low Reverse transfer capacitances(Typical:3.8pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified)
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
700
2.0
1.45
8.0
±30
80
6.4
1.1
5
27
0.216
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
CS2N70F A9
○R
Characteristics Curve:
10
1
0.1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED
TC=25℃ Single Pulse
1 ms
10ms
100ms
DC
0.01
1 10 100 1000
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximum Forward Bias Safe Operating Area
2.5
2.0
1.5
1.0
0.5
27
18
9
0
0 25 50 75 100 125 150
Tc , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
4
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
VGS=15V
3
VGS=7V
2
VGS=6V
VGS=6.5V
1
VGS=4.5V
VGS=5.5V
00
0 25 50 75 100 125 150
TC , Case Temperature , C
0
5 10 15 20
Vds , Drain-to-Source Voltage , Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
1
50%
20%
0.1 10%
5%
0.01
Single pulse
0.001
0.00001
2%
1%
PDM
t1
t2
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10 2015V01
25
1
4페이지 Test Circuit and Waveform
CS2N70F A9
○R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 7 of 10 2015V01
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ CS2N70FA9.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
CS2N70FA9 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |