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PDF CS4N65A4HDY Data sheet ( Hoja de datos )
| Número de pieza | CS4N65A4HDY | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS4N65 A4HDY
○R
General Description：
CS4N65 A4HDY, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data: 14.5nC)
l Low Reverse transfer capacitances(Typical: 8.5pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
650
4
85
1.8
Rating
650
4
3.2
16
±30
150
30
2.5
5.0
85
0.60
3000
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
WUXI CHI NA RESOUR CES HUAJ I NG M I CROELECTRONI CS CO., LTD. Pag e 1 of 1 0 20 15V01
1 page  
CS4N65 A4HDY
○R
WUXI CHI NA RESOUR CES HUAJ I NG M I CROELECTRONI CS CO., LTD. Pag e 5 of 1 0 2 015V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS4N65A4HDY.PDF ] | |
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