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부품번호 | CS1N65A1 기능 |
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기능 | Silicon N-Channel Power MOSFET | ||
제조업체 | Huajing Microelectronics | ||
로고 | |||
Silicon N-Channel Power MOSFET
CS1N65 A1
○R
General Description:
VDSS
650 V
CS1N65 A1, the silicon N-channel Enhanced ID
0.8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W
which reduce the conduction loss, improve switching
RDS(ON)Typ
13.8 Ω
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-92,
which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤16Ω)
l Low Gate Charge (Typical Data:3.6nC)
l Low Reverse transfer capacitances(Typical:1pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
Rating
650
0.8
0.6
3.2
±30
10
2
0.6
5
3
0.024
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
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CS1N65 A1
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Characteristics Curve:
1 0 3.5
1
10μs
10ms
0.1
100ms
0 .0 1
OPERATION IN THIS AREA
MAY BE LIMITED BY RDS(ON)
0 .0 0 1
1
10
TJ=150℃
TC=25℃
Single Pulse
100
DC
1000
V ds,D rain-to-source V oltage,V olts
Figure 1 Maximum Forward Bias Safe Operating Area
1
3
2.5
2
1.5
1
0.5
0
0 25 50 75 100 125 150
Tc , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
1.6
1.4 VGS=10V
0.75
1.2
VGS=9V
1
VGS=8V
0.5 0.8
0.6 VGS=6V
0.25 0.4
VGS=5V
0.2
0
25 50 75 100 125 150
Tc,Case Temperature,C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
50%
20%
0.1 10%
5%
0
0
5 10 15 20 25
Vds,Drain Source Voltage,Volts
Figure 4 Typical Output Characteristics
30
0.01
0.001
2%
1%
PDM
t1
t2
0.0001
Single pulse
0.00001
0.00001
0.0001
NOTES:
DUTY FACTOR :D=t1/ t2
PEAK Tj=PDM*ZthJC*RthJC+TC
0.001
0.01
0.1
1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
10
100
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4페이지 CS1N65 A1
Test Circuit and Waveform
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구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
CS1N65A1 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS1N65A3 | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |