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PDF CS1N60B3R Data sheet ( Hoja de datos )
| Número de pieza | CS1N60B3R | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS1N60 B3R
○R
General Description：
CS1N60 B3R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
600
1.5
32
7
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤8Ω)
l Low Gate Charge (Typical Data:5.2nC)
l Low Reverse transfer capacitances(Typical:2pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
600
1.5
0.9
6
±30
25
6
1.1
5
32
0.26
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 10 20 15V0 1
1 page  
CS1N60 B3R
○R
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 5 of 10 2015V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS1N60B3R.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CS1N60B3R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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