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Número de pieza | CS13N50FA9H | |
Descripción | Silicon N-Channel Power MOSFET | |
Fabricantes | Huajing Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CS13N50FA9H (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! Silicon N-Channel Power MOSFET
CS13N50F A9H
○R
General Description:
CS13N50F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
VDSS
ID
PD (TC=25℃)
RDS(ON)Typ
500
13
60
0.34
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.45Ω)
l Low Gate Charge (Typical Data:45nC)
l Low Reverse transfer capacitances(Typical:23pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ,Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
500
13
10
52
±30
1100
78
4.0
5
60
0.48
150,–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
1 page CS13N50F A9H
○R
100
10
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
4
2
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
1.5
1.25
1
0.75
0.5
0.25
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID= 13A
ID= 6.5A
ID= 3.25A
0
0 1 2 3 45
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
0.8
PULSED TEST
Tc =25 ℃
0.7
6
0
4 6 8 10 12 14
Vgs , Gate to Source Voltage,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
VGS=10V ID=6.5A
2.5
VGS=10V
0.6
0.5
2
1.5
1
0.4 0.5
0.3
0
10
Figure 9
20 30 40 50
Id , Drain Current , Amps
Typical Drain to Source ON Resistance
vs Drain Current
60
0
-100
-50
Figure 10
0 50 100 150 200
Tj, Junction temperature ,C
Typical Drian to Source on Resistance
vs Junction Temperature
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10 2015V01
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet CS13N50FA9H.PDF ] |
Número de pieza | Descripción | Fabricantes |
CS13N50FA9D | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS13N50FA9H | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
CS13N50FA9R | Silicon N-Channel Power MOSFET | Huajing Microelectronics |
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