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PDF CS8N25FA9 Data sheet ( Hoja de datos )
| Número de pieza | CS8N25FA9 | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | Huajing Microelectronics | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
CS8N25F A9
○R
General Description：
CS8N25F A9, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
250
8
30
0.4
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency. The package form is TO-220F, which accords
with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.47Ω)
l Low Gate Charge (Typical Data:12nC)
l Low Reverse transfer capacitances(Typical:7pF)
l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
250
8
5
32
±30
290
30
2.5
5.0
30
0.24
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10 2015V01
1 page  
CS8N25F A9
○R
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10 2015V01
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CS8N25FA9.PDF ] | |
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