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Número de pieza | HFP4N65 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | HUASHAN ELECTRONIC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HFP4N65 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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HFP4N65
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 4A, 650V(See Note), RDS(on) <2.9Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
TO-220
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------650V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)------------------------------------------------------------ 4A
IDM —— Pulsed Drain Current (Note 1)------------------------------------------------------------------- 16A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 100W
Derate Above 25℃ --------------------------------------------------------------------------- 0.8W/℃
EAS—— Pulsed Avalanche Energy (Note 2) ----------------------------------------------------------- 180mJ
IAR—— Avalanche Current (Note 1) ------------------------------------------------------------------------- 4A
EAR —— Repetitive Avalanche Energy (Note 1) ----------------------------------------------------- 10mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------4.5V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220
Max 1.25
Max 62.5
Unit
℃/W
℃/W
1 page Shantou Huashan Electronic Devices Co., Ltd.
█ Typical Characteristics
HFP4N65
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HFP4N65.PDF ] |
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HFP4N65 | N-Channel Enhancement Mode Field Effect Transistor | HUASHAN ELECTRONIC |
HFP4N65 | N-Channel MOSFET | SemiHow |
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