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PDF HGH20N120A Data sheet ( Hoja de datos )
| Número de pieza | HGH20N120A | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | HUASHAN ELECTRONIC | |
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汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
█ Applications
• Induction heating and Microwave oven
• Soft switching applications
█ Features
TO-3P
• Low saturation voltage, Vce(on)(typ)=2.3V@Vge=15V
• High input impedance
• Field stop trench technology offer superior
conduction and switching performances,
• High speed switching
█ Absolute Maximum Ratings
1―Gate，G
2―Collector，C
3―Emitter，E
Symbol
VCES
VGES
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Ratings
1200
±30
Units
V
V
Collector Current（TC = 25℃）
IC
Collector Current（TC = 100℃）
40
20
A
A
ICM (1) Pulsed Collector Current
80 A
IF
Diode continuous Forward current
（TC = 100℃）
15
A
Maximum Power Dissipation（TC =
PD
25℃）
Maximum Power Dissipation（TC =
100℃）
200
80
W
W
TJ
Operating Junction
Temperature
-55～+150 ℃
Tstg Storage Temperature Range -55～+150 ℃
Maximum Lead Temp. for soldering
TL Purposes, 1/8” from case for 5
seconds
300
℃
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
█ Thermal Characteristics
Symbol
Parameter
Typ.
RθJC(IGBT) Thermal Resistance, Junction to Case
RθJC(Diode) Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max. Units
0.44 ℃/W
2.24 ℃/W
40 ℃/W
1 page  
汕头华汕电子器件有限公司
N-Channel Enhancement Insulated Gate Bipolar Transistor
HGH20N120A
█ Typical Performance Characteristics
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet HGH20N120A.PDF ] | |
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