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AUIRFSL4127 데이터시트 PDF




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부품번호 AUIRFSL4127 기능
기능 Power MOSFET ( Transistor )
제조업체 Infineon
로고 Infineon 로고


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AUIRFSL4127 데이터시트, 핀배열, 회로
AUTOMOTIVE GRADE
AUIRFS4127
AUIRFSL4127
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
 D
G
S
D
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
200V
18.6m
22m
72A
D
G
Gate
S
G
D2Pak
AUIRFS4127
D
Drain
S
D
G
TO-262
AUIRFSL4127
S
Source
Base part number
AUIRFSL4127
AUIRFS4127
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFSL4127
AUIRFS4127
AUIRFS4127TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
EAS
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Single Pulse Avalanche Energy (Thermally limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Max.
72
51
300
375
2.5
± 20
57
250
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
V/ns
mJ
A
mJ
°C  
300(1.6mm from case)  
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case 
RJA Junction-to-Ambient
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-27




AUIRFSL4127 pdf, 반도체, 판매, 대치품
 
1000
100 TJ = 175°C
10
TJ = 25°C
1
0.1
0.0
VGS = 0V
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode Forward Voltage
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
8.0
6.0
4.0
2.0
0.0
0
40 80 120 160
VDS, Drain-to-Source Voltage (V)
200
Fig 11. Typical Coss Stored Energy
4
AUIRFS/SL4127
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
1msec
10
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
DC
100
VDS, Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
260
Id = 5mA
240
220
200
180
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1000
800
ID
TOP 8.2A
13A
BOTTOM 44A
600
400
200
0
25
50 75 100 125 150
Starting TJ, Junction Temperature (°C)
175
Fig 12. Maximum Avalanche Energy vs. Drain Current
2015-10-27

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AUIRFSL4127 전자부품, 판매, 대치품
  AUIRFS/SL4127
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 22a. Unclamped Inductive Test Circuit
I AS
Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
VDD 
Fig 24a. Gate Charge Test Circuit
7
Fig 23b. Switching Time Waveforms
Vds
Id
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
2015-10-27

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관련 데이터시트

부품번호상세설명 및 기능제조사
AUIRFSL4127

Power MOSFET ( Transistor )

Infineon
Infineon
AUIRFSL4127

Power MOSFET ( Transistor )

Infineon
Infineon

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