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PDF AUIRL1404ZS Data sheet ( Hoja de datos )

Número de pieza AUIRL1404ZS
Descripción Power MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



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No Preview Available ! AUIRL1404ZS Hoja de datos, Descripción, Manual

 
AUTOMOTIVE GRADE
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRL1404Z
AUIRL1404ZS
AUIRL1404ZL
HEXFET® Power MOSFET
VDSS
40V
RDS(on) typ.
2.5m
max.
3.1m
ID (Silicon Limited)
180A
ID (Package Limited)
160A
DD
GDS
TO-220AB
AUIRL1404Z
G
Gate
S
G
D2Pak
AUIRL1404ZS
D
Drain
S
GD
TO-262
AUIRL1404ZL
S
Source
Base part number Package Type
Standard Pack
Form
Quantity
Orderable Part Number
AUIRL1404Z
TO-220
Tube 50 AUIRL1404Z
AUIRL1404ZL
TO-262
Tube
50 AUIRL1404ZL
AUIRL1404ZS
D2-Pak
Tube
Tape and Reel Left
50
800
AUIRL1404ZS
AUIRL1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Max.
180
130
160
790
200
1.3
± 16
190
490
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
 
°C 
 
 
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
°C/W
1 2015-10-27

1 page




AUIRL1404ZS pdf
 
200
Limited By Package
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs.
Case Temperature
AUIRL1404Z/S/L
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
 5
1
D = 0.50
0.20
0.1 0.10
0.05
0.01
0.001
0.02
0.01
J J
1 1
R1R1
SINGLE PULSE
( THERMAL RESPONSE )
Ci= iRi
Ci= iRi
0.0001
1E-006
1E-005
0.0001
R2R2
2 2
R3R3
3 3
CC
Ri (°C/W)
0.212
0.277
i (sec)
0.000213
0.001234
0.261
0.021750
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2015-10-27

5 Page





AUIRL1404ZS arduino
 
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
AUIRL1404Z/S/L
TO-262 Part Marking Information
Part Number
AUIRL1404ZL
IR Logo
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
2015-10-27

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