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AUIRL3705ZL 데이터시트 PDF




Infineon에서 제조한 전자 부품 AUIRL3705ZL은 전자 산업 및 응용 분야에서
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부품번호 AUIRL3705ZL 기능
기능 Power MOSFET ( Transistor )
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AUIRL3705ZL 데이터시트, 핀배열, 회로
 
AUTOMOTIVE GRADE
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRL3705Z
AUIRL3705ZS
AUIRL3705ZL
HEXFET® Power MOSFET
VDSS
55V
RDS(on) typ.
6.5m
max.
8.0m
ID (Silicon Limited)
86A
ID (Package Limited)
75A
DD
GDS
TO-220AB
AUIRL3705Z
G
Gate
S
G
D2Pak
AUIRL3705ZS
D
Drain
S
GD
TO-262
AUIRL3705ZL
S
Source
Base part number Package Type
Standard Pack
Form
Quantity
Orderable Part Number
AUIRL3705Z
TO-220
Tube 50 AUIRL3705Z
AUIRL3705ZL
TO-262
Tube
50 AUIRL3705ZL
AUIRL3705ZS
D2-Pak
Tube
Tape and Reel Left
50
800
AUIRL3705ZS
AUIRL3705ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
PD @TC = 25°C
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance  
Symbol
Parameter
RJC
RCS
RJA
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Max.
86
61
75
340
130
0.88
± 16
120
180
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
 
°C 
 
 
Typ.
–––
0.50
–––
Max.
1.14
–––
62
40
Units
°C/W
1 2015-10-29




AUIRL3705ZL pdf, 반도체, 판매, 대치품
  AUIRL3705Z/S/L
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
6.0
ID= 52A
5.0
4.0
VDS= 44V
VDS= 28V
VDS= 11V
3.0
2.0
1.0
0.0
0
10 20 30
QG Total Gate Charge (nC)
40
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.0
VGS = 0V
0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
2.0
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
 4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1 10
1msec
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2015-10-29

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AUIRL3705ZL 전자부품, 판매, 대치품
  AUIRL3705Z/S/L
100
Duty Cycle = Single Pulse
0.01
10 0.05
0.10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.1
1.0E-05
1.0E-04
1.0E-03
tav (sec)
1.0E-02
Fig 15. Avalanche Current vs. Pulse width
1.0E-01
150
TOP Single Pulse
BOTTOM 1% Duty Cycle
125 ID = 52A
100
75
50
25
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy vs. Temperature
7 2015-10-29

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