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AUIRLL024Z 데이터시트 PDF




Infineon에서 제조한 전자 부품 AUIRLL024Z은 전자 산업 및 응용 분야에서
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부품번호 AUIRLL024Z 기능
기능 Power MOSFET ( Transistor )
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AUIRLL024Z 데이터시트, 핀배열, 회로
  AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRLL024Z
HEXFET® Power MOSFET
VDSS
55V
RDS(on) typ.
48m
max.
60m
ID 5.0A
D
S
D
G
SOT-223
AUIRLL024Z
G
Gate
D
Drain
S
Source
Base part number
AUIRLL024Z
Package Type
SOT-223
Standard Pack
Form
Quantity
Tape and Reel
2500
Orderable Part Number
AUIRLL024ZTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation (PCB Mount)
Maximum Power Dissipation (PCB Mount)
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Value)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
21
38
See Fig. 12a, 12b, 15, 16
-55 to + 150
Units
A 
W
W/°C
V
mJ
A
mJ
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient (PCB Mount, steady state)
RJA Junction-to-Ambient (PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
Max.
45
120
Units
°C/W
2015-10-29




AUIRLL024Z pdf, 반도체, 판매, 대치품
 
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRLL024Z
6.0
ID= 3.0A
5.0 VDS= 44V
VDS= 28V
4.0 VDS= 11V
3.0
2.0
1.0
0.0
0
1234567
QG Total Gate Charge (nC)
8
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
TJ = 150°C
10
TJ = 25°C
1
0
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
3.0
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
 4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
0.1
1msec
0.01 DC 10msec
0.001
TA = 25°C
Tj = 150°C
Single Pulse
0.0001
0.1 1.0
10
100
VDS, Drain-to-Source Voltage (V)
1000.0
Fig 8. Maximum Safe Operating Area
2015-10-29

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AUIRLL024Z 전자부품, 판매, 대치품
  AUIRLL024Z
100
10 Duty Cycle = Single Pulse
1 0.01
0.05
0.10
0.1
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
1.0E-01
1.0E+00
Fig 15. Typical Avalanche Current vs. Pulse width
1.0E+01
25
TOP
Single Pulse
BOTTOM 1% Duty Cycle
20 ID = 3.0A
15
10
5
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7 2015-10-29

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