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부품번호 | AUIRLU2905 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 11 페이지수
AUTOMOTIVE GRADE
AUIRLR2905
AUIRLU2905
Features
Advanced Planar Technology
Logic Level Gate Drive
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
VDSS
RDS(on)
ID
D
HEXFET® Power MOSFET
55V
max.
27m
42A
D
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
S
G
D-Pak
AUIRLR2905
G
Gate
D
Drain
S
GD
I-Pak
AUIRLU2905
S
Source
Base part number
AUIRLU2905
AUIRLR2905
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLU2905
AUIRLR2905
AUIRLR2905TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
42
30
160
110
0.71
Units
A
W
W/°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (tested Value)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
± 16
210
200
25
11
5.0
-55 to + 175
300
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
°C/W
2015-12-11
2800
2400
2000
Ciss
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
1200
Coss
800
Crss
400
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRLR/U2905
15 I D = 25A
12
VDS = 44V
VDS = 28V
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40 50 60 70
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
1000
100
TJ = 175°C
TJ = 25°C
10
0.4
VGS = 0V A
0.8 1.2 1.6 2.0 2.4
VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100 10µs
100µs
10
1ms
TC = 25°C
TJ = 175°C
1 Single Pulse
10ms
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2015-12-11
4페이지 AUIRLR/U2905
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
7 2015-12-11
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
AUIRLU2905 | Power MOSFET ( Transistor ) | Infineon |
AUIRLU2905 | HEXFET Power MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |