|
|
PDF AUIRLR3114Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRLR3114Z | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AUIRLR3114Z (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRLR3114Z
AUIRLU3114Z
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
4.9m
6.5m
130A
42A
D
D
S
G
D-Pak
AUIRLR3114Z
S
GD
I-Pak
AUIRLU3114Z
G
Gate
D
Drain
S
Source
Base part number
AUIRLU3114Z
AUIRLR3114Z
Package Type
I-Pak
D-Pak
Standard Pack
Form
Quantity
Tube
75
Tube
75
Tape and Reel Left
3000
Orderable Part Number
AUIRLU3114Z
AUIRLR3114Z
AUIRLR3114ZTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
130
89
42
500
140
0.95
Units
A
W
W/°C
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount)
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
± 16 V
130
260
mJ
See Fig.15,16, 12a, 12b
A
mJ
-55 to + 175
°C
300
Typ.
–––
–––
–––
Max.
1.05
50
110
Units
°C/W
1 2015-10-29
1 page  
AUIRLR/U3114Z
140
120
100
80
60
40
20
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.0
ID = 42A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
Ri (°C/W) i (sec)
R 1R 1
R2R2
R3R3
R4R4
0.0350 0.000013
J J
1 1
CC 0.2433 0.000077
2 2
3 3
4 4
0.4851 0.001043
Ci= iRi
Ci= iRi
0.2867 0.004658
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2015-10-29
5 Page 
AUIRLR/U3114Z
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 2015-10-29
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRLR3114Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AUIRLR3114Z | Power MOSFET ( Transistor ) | Infineon |
| AUIRLR3114Z | Power MOSFET ( Transistor ) |  International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |