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PDF AUIRLS3034-7P Data sheet ( Hoja de datos )
| Número de pieza | AUIRLS3034-7P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD - 97717A
AUIRLS3034-7P
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
1.0m
max. 1.4m
cG
ID (Silicon Limited)
380A
S ID (Package Limited) 240A
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S
SS
S
S
G
D2Pak 7 Pin
AUIRLS3034-7P
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
380
270
240
1540
380
2.5
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
ÃdAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
± 20
250
See Fig. 14, 15, 22a, 22b
1.3
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-55 to + 175
300
°C
(1.6mm from case)
Thermal Resistance
Symbol
RJC
RJA
Parameter
klJunction-to-Case
jJunction-to-Ambient
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/29/11
1 page  
1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
400
3.5
Limited By Package
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
AUIRLS3034-7P
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
100
Limited by package
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10msec
DC
10
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
50
Id = 5mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 47A
94A
BOTTOM 220A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
5 Page 
AUIRLS3034-7P
Ordering Information
Base part number Package Type
AUIRLS3034-7P
D2Pak 7 Pin
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Quantity
50
800
800
Complete Part Number
AUIRLS3034-7P
AUIRLS3034-7TRL
AUIRLS3034-7TRR
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRLS3034-7P.PDF ] | |
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