AUIRLS3036-7P Datasheet PDF - International Rectifier
| Part Number | AUIRLS3036-7P | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | International Rectifier | |
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There is a preview and AUIRLS3036-7P download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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AUTOMOTIVE GRADE
PD - 97719A
AUIRLS3036-7P
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
1.5m:
max. 1.9m:
ID (Silicon Limited)
c300A
S ID (Package Limited) 240A
D
S
SS
S
S
G
D2Pak 7 Pin
AUIRLS3036-7P
G
Gate
D
D ra in
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Max.
c300
210
240
1000
380
Units
A
W
Linear Derating Factor
2.5 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
dAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
± 16
300
See Fig. 14, 15, 22a, 22b
8.1
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Symbol
RJC
RJA
Parameter
klJunction-to-Case
jJunction-to-Ambient (PCB Mount, steady state)
Typ.
–––
–––
Max.
0.40
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/29/11
|
| |
 
1000
TJ = 175°C
100
10 TJ = 25°C
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
300
LIMITED BY PACKAGE
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
4.0
3.0
2.0
1.0
0.0
0
10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
70
AUIRLS3036-7P
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
10 LIMITED BY PACKAGE
1msec
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1
DC
10
100
VDS, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
80
ID = 5mA
70
60
50
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP
22A
37A
BOTTOM 180A
600
400
200
0
25
50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AUIRLS3036-7P electronic component. |
| Information | Total 12 Pages | |
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