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PDF BSC011N03LSI Data sheet ( Hoja de datos )
| Número de pieza | BSC011N03LSI | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOSTM Power-MOSFET
Features
• Optimized for high performance SMPS
• Integrated monolithic Schottky-like diode
• Very low on-resistance R DS(on) @ V GS=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC011N03LSI
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
30 V
1.1 mW
100 A
45 nC
68 nC
PG-TDSON-8
Type
BSC011N03LSI
Package
PG-TDSON-8
Marking
011N03LI
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
100 A
100
100
100
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
37
Pulsed drain current3)
I D,pulse T C=25 °C
400
Avalanche current, single pulse4)
I AS
T C=25 °C
50
Avalanche energy, single pulse
E AS I D=50 A, R GS=25 W
100 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 1
2013-05-14
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
400
5V
10 V
4.5 V
4V
3.5 V
300
200
100
BSC011N03LSI
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
2
3.2 V
3.2 V
3V
3.5 V
1.5
4V
4.5 V
5V
1 7V
8V
10 V
2.8 V
0.5
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
400
0
3 0 10 20 30 40 50
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
320
320
240
160
80
150 °C
25 °C
240
160
80
0
012345
VGS [V]
0
0
Rev. 2.2
page 5
40 80 120
ID [A]
160
2013-05-14
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC011N03LSI.PDF ] | |
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