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부품번호 | BSC026N04LS 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 13 페이지수
BSC026N04LS
MOSFET
OptiMOSTMPower-MOSFET,40V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 40
V
RDS(on),max
2.6
mΩ
ID 100 A
QOSS
28
nC
QG(0V..10V)
32
nC
SuperSO8
8 7 65
56 78
1
23
4
4321
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSC026N04LS
Package
PG-TDSON-8
Marking
026N04LS
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSC026N04LS
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
40
1.2
-
-
-
-
-
-
85
Values
Typ. Max.
--
-2
0.1 1
10 100
10 100
2.1 2.6
2.6 3.6
0.9 1.8
170 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=250µA
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=50A
VGS=4.5V,ID=50A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
2300 3220
640 900
52 104
5-
4-
37 -
4-
Unit Note/TestCondition
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
pF VGS=0V,VDS=20V,f=1MHz
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total1)
Gate charge total, sync. FET
Output charge1)
Qgs
Qg(th)
Qgd
Qsw
Qg
Vplateau
Qg
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
-
-
Values
Typ. Max.
6.0 -
3.6 -
5.2 7.3
7.5 -
32 45
2.6 -
16 22
13 -
28 39
Unit Note/TestCondition
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to10V
V VDD=20V,ID=50A,VGS=0to10V
nC VDD=20V,ID=50A,VGS=0to4.5V
nC VDS=0.1V,VGS=0to4.5V
nC VDD=20V,VGS=0V
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2016-06-09
4페이지 OptiMOSTMPower-MOSFET,40V
BSC026N04LS
Diagram5:Typ.outputcharacteristics
400
10 V
350
300 4.5 V
5V
250 4 V
3.5 V
200
150 3.2 V
100 3 V
50 2.8 V
0
01
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
6
2.8 V
5 3V
3.2 V
3.5 V
4
4V
3 4.5 V
5V
2 10 V
1
0
2 0 50 100 150 200 250 300 350 400
ID[A]
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
400
Diagram8:Typ.forwardtransconductance
250
320 200
240 150
160 100
80
150 °C
25 °C
0
0123
VGS[V]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
4
50
0
5 0 20
gfs=f(ID);Tj=25°C
40 60
ID[A]
80 100
Final Data Sheet
7 Rev.2.1,2016-06-09
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
BSC026N04LS | MOSFET ( Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |