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PDF MMBTA64 Data sheet ( Hoja de datos )
| Número de pieza | MMBTA64 | |
| Descripción | PNP Transistor | |
| Fabricantes | JCET | |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA64 TRANSISTOR (PNP)
SOT–23
FEATURES
For Applications Requiring High Current Gain
MARKING:2V
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-30
VCEO Collector-Emitter Voltage
-30
VEBO Emitter-Base Voltage
-10
IC Collector Current
-800
PC Collector Power Dissipation
300
RΘJA Thermal Resistance From Junction To Ambient
416
Tj Junction Temperature
150
Tstg Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA, IE=0
-30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-10
V
Collector cut-off current
ICBO
VCB=-30V, IE=0
-0.1 µA
Emitter cut-off current
IEBO VEB=-10V, IC=0
-0.1 µA
DC current gain
hFE(1) *
hFE(2) *
VCE=-5V, IC=-10mA
VCE=-5V, IC=-100mA
10
20
K
K
Collector-emitter saturation voltage
VCE(sat) *
IC=-100mA, IB=-0.1mA
-1.5 V
Base-emitter voltage
VBE*
VCE=-5V, IC=-100mA
-2 V
Transition frequency
VCE=-5V,IC=-10mA,
fT
f=100MHz
125
MHz
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
A,Oct,2010
1 page | ||
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| PDF Descargar | [ Datasheet MMBTA64.PDF ] | |
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