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PDF STK0380F Data sheet ( Hoja de datos )
| Número de pieza | STK0380F | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | AUK | |
| Logotipo |  |
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STK0380F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-source breakdown voltage: BVDSS=800V (Min.)
Low gate charge: Qg=14.2nC (Typ.)
Low drain-source On resistance: RDS(on)=3.5Ω (Typ.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
STK0380F
STK0380
TO-220F-3L
GDS
TO-220F-3L
Marking Information
SMN
03T80
YWAWUAKUK
SGTFKΔY0YM3MD8DD0 D
SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information
e.g.) GFYMDD
-. G : Option Code (H : Halogen Free)
-. F : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
* Limited only maximum junction temperature
VDSS
VGSS
ID Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
Rev. date: 28-MAR-13
KSD-T0O024-002
Rating
800
30
3
1.8
12
335
3
11.5
30
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
www.auk.co.kr
1 of 8
1 page  
Fig. 11 Gate Charge Test Circuit & Waveform
STK0380F
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 EAS Test Circuit & Waveform
Rev. date: 28-MAR-13
KSD-T0O024-002
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STK0380F.PDF ] | |
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