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CE3512K2 데이터시트 PDF




CEL에서 제조한 전자 부품 CE3512K2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 CE3512K2 자료 제공

부품번호 CE3512K2 기능
기능 12 GHz Super Low Noise FET
제조업체 CEL
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CE3512K2 데이터시트, 핀배열, 회로
RF Low Noise FET
CE3512K2
12 GHz SupEenrteLroawShNorot iDsoecuFmEeTnti/nTitHleoNllaomwe HPelarestic PKG
DESCRIPTION
Super Low Noise and High Gain
Hollow (Air Cavity) Plastic package
FEATURES
Super Low noise figure and high associated gain:
NF = 0.30 dB TYP., Ga = 13.7 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 12 GHz
PACKAGE
Micro-X plastic package
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
Order Number
CE3512K2
CE3512K2-C1
Package
Micro-X plastic
package
Marking
C5
Description
Embossed tape 8 mm wide
Pin 4 (Gate) faces the
perforation side of the tape
MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: July 2016
CDS-0018-05 (Issue A)
1




CE3512K2 pdf, 반도체, 판매, 대치품
TYPICAL CHARACTERISTICS :
(TA=+25, unless otherwise specified)
TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
CE3512K2
DRAIN CURRENT VS.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT VS.
GATE TO SOURCE VOLTAGE
MINIMUM NOISE FIGURE &
ASSOCIATED GAIN VS. DRAIN CURRENT
This document is subject to change without notice.
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CE3512K2 전자부품, 판매, 대치품
CE3512K2
[CAUTION]
All information included in this document is current as of the date this document is issued. Such information,
however, is subject to change without any prior notice.
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from errors in or omissions from the information included herein.
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This document is subject to change without notice.
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관련 데이터시트

부품번호상세설명 및 기능제조사
CE3512K2

12 GHz Super Low Noise FET

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