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What is K2016?

This electronic component, produced by the manufacturer "Panasonic", performs the same function as "Silicon N-Channel Power F-MOS".


K2016 Datasheet PDF - Panasonic

Part Number K2016
Description Silicon N-Channel Power F-MOS
Manufacturers Panasonic 
Logo Panasonic Logo 


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Total 2 Pages



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Power F-MOS FETs
2SK2016
Silicon N-Channel Power F-MOS
s Features
q Low ON-resistance RDS(on) : RDS(on)1= 0.315(typ)
q High-speed switching : tf= 38ns(typ)
q No secondary breakdown
q For low-voltage drive(VGS= 4V)
q Taping supply possible
s Applications
q DC-DC converter
q Non-contact relay
q Solenoid drive
q Motor drive
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter
Drain-Source breakdown voltage
Gate-Source voltage
at 4V drive
Drain current
DC
Pulse
Allowable power
dissipation
TC= 25˚C
Ta=25˚C
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Rating
100
±20
±3
±5
±10
10
0.75
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (Tc = 25˚C)
Parameter
Drain-Source cut-off current
Gate-Source leakage current
Drain-Source breakdown voltage
Gate threshold voltage
Drain-Source ON-resistance
Forward transadmittance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on) 1
RDS(on) 2
| Yfs |
Ciss
Coss
Crss
ton
tf
td(off)
Condition
VDS= 80V, VGS= 0
VGS= ±20V, VDS= 0
ID=1mA, VGS= 0
VDS=10V, ID=1mA
VGS=10V, ID= 3A
VGS= 4V, ID= 2A
VDS=10V, ID= 3A
VDS=10V, VGS= 0, f= 1MHz
VGS=10V, ID= 3A
VDD= 30V, RL=10
2SK2016
6.5±0.1
5.3±0.1
4.35±0.1
3.0±0.1
Unit : mm
0.85±0.1
4.6±0.1
0.75±0.1 0.5±0.1
0.05 to 0.15
1.0±0.1
123
Marking
1 : Gate
2 : Drain
3 : Source
EIAJ : SC-63
U Type Package
Min Typ Max Unit
10 µ A
±1 µ A
100 V
1 2.5 V
0.315 0.47
0.4 0.6
2.5 3.8
S
416 pF
135 pF
38 pF
26 ns
38 ns
84 ns


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for K2016 electronic component.


Information Total 2 Pages
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