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Número de pieza | IPAW60R380CE | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IPAW60R380CE (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! IPAW60R380CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
•Widedistanceof4.25mmbetweentheleads
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
PG-TO220FullPAKWideCreepage
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
380
mΩ
ID. 15 A
Qg.typ
32
nC
ID,pulse
30
A
Eoss@400V
2.8
µJ
Type/OrderingCode
IPAW60R380CE
Package
PG - TO220 FullPAK
WideCreepage
Marking
60S380CE
RelatedLinks
see Appendix A
Final Data Sheet
1
2016-03-31
1 page 600VCoolMOSªCEPowerTransistor
IPAW60R380CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance,
energy related1)
Effective output capacitance,
time related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
600
2.5
-
-
-
-
-
-
Values
Typ. Max.
--
3.0 3.5
-1
10 -
- 100
0.34 0.38
0.89 -
7.5 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V VDS=VGS,ID=0.32mA
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=3.8A,Tj=25°C
VGS=10V,ID=3.8A,Tj=150°C
Ω f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
700 -
46 -
30 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 136 - pF ID=constant,VGS=0V,VDS=0...480V
-
11 -
ns
VDD=400V,VGS=13V,ID=4.8A,
RG=3.4Ω;seetable9
-
9-
ns
VDD=400V,VGS=13V,ID=4.8A,
RG=3.4Ω;seetable9
-
56 -
ns
VDD=400V,VGS=13V,ID=4.8A,
RG=3.4Ω;seetable9
-
8-
ns
VDD=400V,VGS=13V,ID=4.8A,
RG=3.4Ω;seetable9
Min.
-
-
-
-
Values
Typ. Max.
4-
16 -
32 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=4.8A,VGS=0to10V
nC VDD=480V,ID=4.8A,VGS=0to10V
nC VDD=480V,ID=4.8A,VGS=0to10V
V VDD=480V,ID=4.8A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
Final Data Sheet
5
2016-03-31
5 Page 600VCoolMOSªCEPowerTransistor
IPAW60R380CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF tS
IF t
QF QS
10 %Irrm
dIrr / dt Qtrrrr ==tFQ+F t+S QS
Table9Switchingtimes
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VDS
ID
VDS
Final Data Sheet
11
2016-03-31
11 Page |
Páginas | Total 14 Páginas | |
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IPAW60R380CE | MOSFET ( Transistor ) | Infineon |
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