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부품번호 | WCR470N60TF 기능 |
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기능 | 600V N-Channel Super Junction MOSFET | ||
제조업체 | Will Semiconductor | ||
로고 | |||
WCR470N60T/WCR470N60TF
WCR470N60T/WCR470N60TF
600V N-Channel Super Junction MOSFET
Description
The WCR470N60T/WCR470N60TF series is new
generation of high voltage MOSFET family that is utilizing
an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. This device is suitable for various AC/DC power
conversion in switching mode operation for higher
efficiency.
Features
650V@TJ=150°C
Typ.RDS(on)=0.42Ω
Low gate charge(typ. Qg= 12.6nC)
100% avalanche tested
100% Rg tested
Order Information
Device
Package
Marking
Units/Tube
WCR470N60T-3/T
TO-220
WCR470N60TYYWW
50
WCR470N60TF-3/T TO-220F WCR470N60TFYYWW
50
WCR
470N60
TFYYWW
WCR
470N60
TYYWW
Note 1: WCR470N60T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR470N60TF=Device code ; YY=Year ;WW=Week (A~z);
TO-220F
TO-220
Absolution Maximum Ratings TA=250C unless otherwise noted
Parameter
Symbol
WCR470N60T
WCR470N60TF
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
600
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
9.4
5.9
25
120
2
0.28
Power Dissipation
TC=25°C
Derate above 25°C
PD
73.5
0.58
29.8
0.24
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
Thermal Resistance Ratings
TL
260
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
1.7
4.2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd. 1 Jan, 2016 - Rev.0.9
10
1
0.1
0.01
1E-3
125oC
85oC25oC
-55oC
1E-4
0.2 0.4 0.6 0.8 1.0
V -Source-to-Drain Voltage(V)
sd
Body diode forward voltage
1.2
f=1MHz
1 Ciss
0.1
0.01
0.1
90
Coss
Crss
1 10
VDS(V)
Capacitance
100
WCR470N60T/WCR470N60TF
5
4
3
2 Eoss
1
0
0 100 200 300 400 500
VDS(V)
Coss stored Energy
10
VDD=480V ID=10A
8
6
4
2
0
0 2 4 6 8 10 12
Qg(nC)
Gate charge Characteristics
60
TO-220
30
TO-220F
0
0 50 100
T (oC)
CASE
Power dissipation
Will Semiconductor Ltd.
150
4
Jan, 2016 - Rev.1.0
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ WCR470N60TF.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
WCR470N60T | 600V N-Channel Super Junction MOSFET | Will Semiconductor |
WCR470N60TF | 600V N-Channel Super Junction MOSFET | Will Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |