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PDF BSZ068N06NS Data sheet ( Hoja de datos )
| Número de pieza | BSZ068N06NS | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Type
OptiMOSTM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSZ068N06NS
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
60 V
6.8 mW
40 A
19 nC
17 nC
PG-TSDSON-8
(Fused Leads)
Type
Package
Marking
BSZ068N06NS PG-TSDSON-8 (Fused Leads)
068N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C
40 A
V GS=10 V, T C=100 °C
38
V GS=10 V, T C=25 °C,
R thJA =60K/W2)
13
Pulsed drain current3)
Avalanche energy, single pulse4)
I D,pulse
E AS
T C=25 °C
I D=20 A, R GS=25 W
160
43 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev.2.0
page 1
2013-10-17
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
160
10 V
140
7V
120
100 6 V
80
60 5.5 V
40
5V
20
0
0.0
0.5 1.0
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
1.5
140
120
100
80
60
40
20
0
0
150 °C
25 °C
246
VGS [V]
Rev.2.0
BSZ068N06NS
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
20
15
5V
5.5 V
10 6 V
7V
10 V
5
0
2.0 0 40 80 120
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
80
60
40
20
0
80
page 5
20 40
ID [A]
60
2013-10-17
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSZ068N06NS.PDF ] | |
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