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PDF BSZ150N10LS3G Data sheet ( Hoja de datos )
| Número de pieza | BSZ150N10LS3G | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOSTM3 Power-Transistor
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, Logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
BSZ150N10LS3 G
Product Summary
VDS
RDS(on),max
ID
100 V
15 mW
40 A
PG-TSDSON-8
Type
BSZ150N10LS3 G
Package
Marking
PG-TSDSON-8 150N10L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Value
40
30
Unit
A
V GS=10 V, T A=25 °C,
R thJA=60 K/W2)
8
Pulsed drain current3)
I D,pulse T C=25 °C
160
Avalanche energy, single pulse4) E AS I D=20 A, R GS=25 W
80 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.2
page 1
2013-01-28
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
100
80
10 V
6V
4.5 V
4V
60
40 3.5 V
3.2 V
20
0
0123
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
80
4
BSZ150N10LS3 G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
32
28
3.2 V
3.5 V
24
4V
20
4.5 V
16
6V
7.5 V
12 10 V
8
4
0
5 0 20 40 60
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80 100
70
60
60
50
40
40
30
20
150 °C
25 °C
0
01234567
VGS [V]
20
10
0
0
Rev. 2.2
page 5
10 20 30 40 50
ID [A]
2013-01-28
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSZ150N10LS3G.PDF ] | |
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