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Número de pieza | BD63005MUV | |
Descripción | 3-Phase Brushless Motor Driver | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
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No Preview Available ! Datasheet
3-Phase Brushless Motor Driver
BD63005MUV
General Description
BD63005MUV is a 3-phase brushless motor driver with
a 33V power supply voltage rating and a 2A (3.5A peak)
output current rating. It generates a driving signal from
the Hall sensor and drives PWM through the input
control signal. In addition, the power supply can use 12V
or 24V and it has various controls and built-in protection
functions, making it useful for variety of purposes. Since
the IC adopts small packages, it can be used on small
diameter motors.
Features
Built-in 120° Commutation Logic Circuit
Low ON Resistance DMOS Output
PWM Control Mode (low side arm switching)
Built-in Power-saving Circuit
CW/CCW Function
Short Brake Function
FG Output (1FG/3FG conversion)
Built-in Protection Circuit for Current Limiting (CL),
Overheating (TSD), Over Current (OCP), Under
Voltage (UVLO), Over Voltage (OVLO), Motor Lock
(MLP)
Key Specifications
Power supply voltage rating
33V
Output current rating (Continuous):
2.0A
Output current rating (Peak):
3.5(Note1)A
Operating temperature range:
-25 to +85°C
Stand-by current:
1.2mA(Max)
Current limit detect voltage:
0.2V±10%
Output ON Resistance (top & bottom total):
0.17Ω(Typ)
UVLO lockout voltage:
6.0V(Typ)
(Note1) Pulse width tw≤1ms, duty=20% pulse
Package
VQFN040V6060
W(Typ) x D(Typ) x H(Max)
6.00mm x 6.00mm x 1.00mm
Applications
OA machines
Other consumer products
Typical Application Circuit(s)
Figure 1. Application Circuit
〇Product structure : Silicon monolithic integrated circuit
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0P1P0B000610-1-2
14.JAN.2014 Rev.001
1 page BD63005MUV
Datasheet
6) CW/CCW Input Terminal (CW)
Rotation direction can be switched with CW terminal. When CW="H" or OPEN, the direction is CW. When CW="L",
the direction is CCW. Though we do not recommend switching rotation direction when motor is rotating, because if
rotation direction is switched when rotating, the rotation speed becomes hall frequency that is up to less than 40Hz
(Typ) and it is switched to the set rotation direction after the action short brake. In addition, CW terminal is pulled up
by VREG through resistance of 100kΩ (Typ) ±30kΩ.
CW
H or OPEN
L
Direction
CW
CCW
7) 1FG/3FG Switching Terminal (FGSW)
FG signal that is output from FGO terminal can be switched to 1FG/3FG. It becomes 3FG by FGSW="H" or OPEN,
and 1 FG by FGSW="L". Moreover, FGSW terminal is pulled up by VREG through resistance of 100kΩ (Typ)±30kΩ.
FGSW
H or OPEN
L
FGO
3FG
1FG
8) Hall Input (HALL: HUP, HUN, HVP, HVN, HWP, HWN)
Hall input amplifier is designed with hysteresis (±15mV (Typ)) in order to prevent incorrect action due to noise inside.
So please set bias current for Hall element to make amplitude of Hall input voltage over minimum input voltage
(VHALLMIN). Here, we recommend you to connect the ceramic capacitor with about 100pF to 0.01µF between
difference input terminals of Hall amplifier. The in-phase input voltage range designed for Hall input Amplifier is
VHALLCM, 0V to VREG-1.7V, so please set within this range when applying bias to Hall element. When all Hall inputs
become "H" or "L", detect circuit detects these Hall input abnormalities and makes all driver outputs "Hi-z".
9) FG Output Terminal (FGO)
1FG or 3FG signal that is reshaped by hall signal is output from FGO terminal. It is does not have output in stand-by
mode. In addition, because FG terminal is output from open drain, please use resistance of about 10kΩ to 100kΩ
pulled up from outside. In that case, please be careful that FGO voltage or current never exceed rating.
10) Power Supply Terminal (VCC)
Please make low impedance thick and short since motor drive current flows. Please stabilize VCC by placing bypass
capacitor near terminal as much as possible because VCC might be changed considerably by motor BEMF and PWM
switching. Please add capacity of capacitor as necessary when using large current and motor with large BEMF.
Moreover, it is recommended to place laminated ceramic capacitor of around 0.01µF to 0.1µF in parallel on the
purpose of decreasing impedance of power supply broadband. Please be careful that VCC never exceeds ratings.
VCC terminal has clamp element for preventing ESD damage. If applying steep pulse signal and voltage such as
surge more than ratings, this clamp element operates, which might be a cause of destruction. It is effective to put
zener diode that corresponds to VCC absolute maximum ratings. Diode for preventing ESD damage is inserted
between VCC and GND terminals. Please note that IC might be destroyed when BEMF is applied to VCC and GND
terminals.
11) Ground Terminal (GND, PGND)
Wiring impedance from this terminal should be as low as possible for reducing noise of switching current and
stabilizing basic voltage inside of IC, and the impedance also should be the lowest potential in any operating
condition. In addition, please do pattern design not to have same impedance as other GND pattern.
12) Driver Output Terminal (U, V, W)
Impedance wiring should be thick, short, and low due to motor drive current. When using big current, in case that
driver current changes considerably toward positive and negative (when BEMF is large), malfunction or destruction of
IC might occur. It is effective to add shot key diode. Moreover, clamp element is built in driver output terminal in order
to prevent ESD damage. If applying steep pulse signal or voltage such as surge more than ratings, this clamp
element operates. Then it might cause destruction of IC, so that please pay attention not to exceed ratings.
Additionally, When driver output converts "L"→"H" or "H"→"L", for example when synchronous rectification PWM
operating , dead time (1µs to 2µs(Typ)) can be set to prevent simultaneous ON of output top & bottom MOS.
13) Capacitor Connection Terminal for Boosting, Boosting Output Terminal (CP1, CP2, VG)
Charge pump is built-in for upper Nch MOS drive signal of driver output. Boosting voltage of VCC+5V (Typ) occurs in
VG terminal by connecting capacitor between CP1 to CP2 terminals and VG to VCC terminals. It is recommended to
use capacitor more than 0.1µF.
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
5/15
TSZ02201-0P1P0B000610-1-2
14.JAN.2014 Rev.001
5 Page BD63005MUV
I/O Equivalence Circuits
Internal
Reg
100kΩ
ENB
10kΩ
VREG
FGSW
PWMB
BRKB
CW
100kΩ
10kΩ
Datasheet
VREG
CLNMT
LPE
100kΩ
10kΩ
10kΩ
145kΩ
50kΩ
VCC
VREG
HUP
HUN
HVP
HVN
HWP
HWN
VCC
U
V
W
RNF
VREG
2kΩ
5Ω
FGO
VREG
RCL
250kΩ
2kΩ
Internal
Reg
20Ω
CP1
20Ω
VG
CP2
VCC
Figure 6. I/O Equivalence Circuits
Power Dissipation
VQFN040V6060 package has metal for heat dissipation on backside of IC. It is supposed to use this metal for processing
heat dissipation, so please connect to GND plane on board by soldering and keep GND pattern as large as possible to get
enough heat dissipation area. It is impossible to keep power dissipation as shown below without soldering. The Backside
metal is shorted to backside of IC chip and it is also GND potential. Therefore please do not make wiring pattern other than
GND right under backside metal of IC, since malfunction and destruction of IC might occur by being shorted to potential other
than GND.
5. 0 ③4.66W
4. 0 ②3.77W
3. 0
2. 0
Package thermal resistor
Board
θ j-a [°C/W]
Board ①
125
Board ②
33.2
Board ③
26.8
①1.00W
1. 0
0. 0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE [°C]
PCB size:74.2mm×74.2mm×1.6mm
Board①:1 layer PCB (1 layer:23.69mm2)
Board②:4 layer PCB (1,4 layer:23.69mm2. 2,3 layer:5505mm2)
Board③:4 layer PCB (all layers:5505mm2)
():Copper foil pattern area size
Caution:Values about heat reducing curve and packaged thermal
resistor are tested values.
Figure 7. Derating Curve
(VQFN040V6060)
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 15 • 001
11/15
TSZ02201-0P1P0B000610-1-2
14.JAN.2014 Rev.001
11 Page |
Páginas | Total 18 Páginas | |
PDF Descargar | [ Datasheet BD63005MUV.PDF ] |
Número de pieza | Descripción | Fabricantes |
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