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PDF BSZ099N06LS5 Data sheet ( Hoja de datos )
| Número de pieza | BSZ099N06LS5 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
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BSZ099N06LS5
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
9.9
mΩ
ID 40 A
QOSS
13
nC
QG(0V..4.5V)
7
nC
TSDSON-8FL
(enlarged source interconnection)
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSZ099N06LS5
Package
PG-TSDSON-8 FL
Marking
099N06L
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2016-08-10
1 page  
OptiMOSTMPower-Transistor,60V
BSZ099N06LS5
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
- 32
- 128
0.87 1.1
18 36
6 12
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=20A,Tj=25°C
ns VR=30V,IF=20A,diF/dt=100A/µs
nC VR=30V,IF=20A,diF/dt=100A/µs
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.2,2016-08-10
5 Page 
OptiMOSTMPower-Transistor,60V
BSZ099N06LS5
RevisionHistory
BSZ099N06LS5
Revision:2016-08-10,Rev.2.2
Previous Revision
Revision Date
2.0 2015-12-23
2.1 2016-04-07
2.2 2016-08-10
Subjects (major changes since last revision)
Release of final version
Update gate threshold voltage
Update in Qrr and trr
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11 Rev.2.2,2016-08-10
11 Page | ||
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