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Número de pieza | BSZ146N10LS5 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
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No Preview Available ! BSZ146N10LS5
MOSFET
OptiMOSTM5Power-Transistor,100V
Features
•Idealforhighfrequencyswitching
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•N-channel,Logiclevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 100 V
RDS(on),max
14.6
mΩ
ID 40 A
QOSS
20
nC
QG(0V..4.5V)
8
nC
TSDSON-8FL
(enlarged source interconnection)
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSZ146N10LS5
Package
PG-TSDSON-8 FL
Marking
146N10L
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2016-08-10
1 page OptiMOSTM5Power-Transistor,100V
BSZ146N10LS5
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge1)
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
- 40
- 160
0.88 1.1
26 52
19 38
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=20A,Tj=25°C
ns VR=50V,IF=20A,diF/dt=100A/µs
nC VR=50V,IF=20A,diF/dt=100A/µs
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.2,2016-08-10
5 Page OptiMOSTM5Power-Transistor,100V
BSZ146N10LS5
RevisionHistory
BSZ146N10LS5
Revision:2016-08-10,Rev.2.2
Previous Revision
Revision Date
2.0 2016-03-23
2.1 2016-04-21
2.2 2016-08-10
Subjects (major changes since last revision)
Release of final version
Update Gate threshold voltage (VGSth)
Update in Qrr and trr
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
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©2016InfineonTechnologiesAG
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Final Data Sheet
11 Rev.2.2,2016-08-10
11 Page |
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