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PDF IPC100N04S5-1R9 Data sheet ( Hoja de datos )
| Número de pieza | IPC100N04S5-1R9 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPC100N04S5-1R9 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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IPC100N04S5-1R9
OptiMOS™-5 Power-Transistor
Product Summary
Features
• OptiMOS™ - power MOSFET for automotive applications
VDS
RDS(on),max
ID
40 V
1.9 mW
100 A
PG-TDSON-8-34
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
1
1
• 100% Avalanche tested
Type
IPC100N04S5-1R9
Package
Marking
PG-TDSON-8-34 5N041R9
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I D,pulse T C=25°C
E AS I D=50A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value
100
100
400
130
100
±20
100
-55 ... +175
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2016-09-07
1 page  
IPC100N04S5-1R9
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
400
10 V
7V
5.5 V
300
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
12
4.5V
10
8
5V
200 5 V 6
5.5 V
4
100
4.5 V
2
7V
10 V
0
012
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
3
0
4 0 100 200 300
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
400
400 3.5
360
3
320
280
2.5
240
200 2
160
120 1.5
80
40 175 °C
25 °C -55 °C
0
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VGS [V]
1
0.5
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.1
page 5
2016-09-07
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPC100N04S5-1R9.PDF ] | |
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