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PDF 8N10P Data sheet ( Hoja de datos )

Número de pieza 8N10P
Descripción N-CHANNEL MOSFET
Fabricantes CHONGQING PINGYANG 
Logotipo CHONGQING PINGYANG Logotipo



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No Preview Available ! 8N10P Hoja de datos, Descripción, Manual

8N10P
8 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
8A,100V,RDS(ON)MAX=23mΩVGS=10V/8A
Low gate charge
Low Ciss
Fast switching
100% avalanche tested
Improved dv/dt capability
APPLICATION
High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
LCD/LED back light
GENERAL DESCRIPTION
SOP8L PIN CONFIGURATION
The 8N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The 8N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAS
dv/dt
TJ,TSTG
TCH
TL
8N10P
100
±20
8
32
11
15
5.5
-55 to +150
150
260
UNIT
V
A
mJ
A
V/ns
Thermal Characteristics
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25
Symbol
Rth(ch-c)
Rth(ch-a)
PD
MAX
16
59
3.1
Units
/W
/W
W

1 page




8N10P pdf
RATINGAND CHARACTERISTIC CURVES
40 10V 4.5V
30
20
10
3V
0
01 23 4
VDS,Drain-to-Source Voltage(V)
100
5
TJ =150℃
10
TJ =25℃
1
VGS =0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS,Source-Drain Voltage(V)
140
130
120
110
100
80
70
-60 -40 -20 0 25 50 75 100 125 150 175
TJ , Junction Temperature()
12
ID =8A
10
8
6
4
2
0
0
10000
1000
4 8 12 16 20 14
Qg ,Total Gate Charge(nC)
Ciss
Coss
100 Crss
10
1
0
F= 1MHz
20 40 60 80 100 100
VDS,Drain-to-Source Voltage(V)
3
2.5
2
1.5
1 VGS=10V
0.5
0
-75 -50 -25 0 25 50 75 100125 150 175
TJ , Junction Temperature()

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