|
|
PDF BSC059N03SG Data sheet ( Hoja de datos )
| Número de pieza | BSC059N03SG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSC059N03SG (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
OptiMOS™2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• Avalanche rated; dv/dt rated
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC059N03S G
Product Summary
V DS
R DS(on),max
ID
30 V
5.5 mΩ
73 A
PG-TDSON-8
Type
BSC059N03S G
Package
PG-TDSON-8
Marking
59N03S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=45 K/W2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I D,pulse
E AS
dv /dt
T C=25 °C3)
I D=50 A, R GS=25 Ω
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation
V GS
P tot
T C=25 °C
T A=25 °C,
R thJA=45 K/W2)
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Rev. 1.56
page 1
Value
73
46
17.5
200
150
6
±20
48
2.8
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
2009-10-22
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
10 V 4.5 V
100
BSC059N03S G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
25
2.8 V
3.4 V
3.7 V
4V
3.2 V
4 V 20 3 V
80
60
40
20
0
012
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
160
3.7 V
15
3.4 V
10
3.2 V
3V
2.8 V
3
5
0
0 20 40 60
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
140
140 120
120
100
100
80
80
60
60
40
40
150 °C
25 °C
20 20
4.5 V
10 V
80 100
0
012345
V GS [V]
0
0
Rev. 1.56
page 5
20 40 60
I D [A]
80
2009-10-22
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC059N03SG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSC059N03S | OptiMOS2 Power-Transistor |  Infineon Technologies AG |
| BSC059N03SG | Power-Transistor | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |