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CGHV14800 데이터시트 PDF




Cree에서 제조한 전자 부품 CGHV14800은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 CGHV14800 자료 제공

부품번호 CGHV14800 기능
기능 GaN HEMT
제조업체 Cree
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CGHV14800 데이터시트, 핀배열, 회로
CGHV14800
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic
control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking
radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically
deliverying >65% drain efficiency. The package options are ceramic/metal flange package.
Package
PN:
CTGypHeV: 1444800101F7
Typical Performance Over 1.2-1.4 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
900 900 870 870
Power Gain
14.5
14.5
14.0
14.0
Drain Efficiency
68 67 67 63
Note:
Measured in the CGHV14800-AMP amplifier circuit, under 3 μs pulse width, 3% duty cycle, PIN = 45 dBm.
1.4 GHz
920
14.0
62
Units
W
dB
%
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• 800 W Minimum Output Power
• 14 dB Power Gain
• 69% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
Internally input and output matched
Subject to change without notice.
www.cree.com/rf
1




CGHV14800 pdf, 반도체, 판매, 대치품
CGHV14800F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
R1
R2
R3
L1
C1, C14, C15
C16
C2
C3, C8
C4, C9
C5, C10
C6
C7
C11
C14
J1,J2
J3
J4
W1
Q1
Description
RES, 5.1,OHM, +/- 1%, 0.25W, 1206
RES,1/16W,0603,1%,4.99K OHMS
RES 536OHM +/- 1%, 0.25W,1206
INDUCTOR,CHIP,6.8nH,0603 SMT
CAP, 100 PF +/- 5%,, 250V, 0805, ATC 600F
CAP, 2.0pF, +/-0.1pF, 0603, ATC
CAP, 33pF, +/-5%, 0603, ATC
CAP, 470PF, 5%, 100V, 0603, X7R
CAP,33000PF, 0805,100V, X7R
CAP, 1.0UF, 100V, 10%, X7R, 1210
CAP 10UF 16V TANTALUM
CAP, 33 PF +/- 5%,, 250V, 0805, ATC 600F
CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC
CAP 10uF 16V TANTALUM
CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST
HEADER RT>PLZ .1CEN LK 9POS
CONNECTOR ; SMB, Straight, JACK,SMD
CABLE ,18 AWG, 4.2
PCB, TMM10i, 0.025” THK, CGHV14800 1.2-1.4GHZ
2-56 SOC HD SCREW 1/4 SS
#2 SPLIT LOCKWASHER SS
CGHV14800F
Qty
1
1
1
1
3
1
1
2
2
2
1
1
1
1
2
1
1
1
1
4
4
1
CGHV14800F-AMP Demonstration Amplifier Circuit
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4 CGHV14800 Rev 0.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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CGHV14800 전자부품, 판매, 대치품
Part Number System
CGHV14800F
Type
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Product Line
Parameter
Value
Units
Upper Frequency1
Power Output
Type
1.4
800
F = Flanged
P = Package
GHz
W
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
F
G
H
J
K
Examples:
0
1
2
3
4
5
6
7
8
9
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7 CGHV14800 Rev 0.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf

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관련 데이터시트

부품번호상세설명 및 기능제조사
CGHV14800

GaN HEMT

Cree
Cree

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