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IGB30N60T 데이터시트 PDF




Infineon에서 제조한 전자 부품 IGB30N60T은 전자 산업 및 응용 분야에서
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부품번호 IGB30N60T 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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IGB30N60T 데이터시트, 핀배열, 회로
IGB30N60T
TRENCHSTOPSeries
q
Low Loss IGBT : IGBT in TRENCHSTOPand Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
TRENCHSTOPtechnology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO263-3
Type
IGB30N60T
VCE
600V
IC
30A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking Code
G30T60
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
-
Value
600
45
39
90
90
20
5
187
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 19.05.2015




IGB30N60T pdf, 반도체, 판매, 대치품
IGB30N60T
TRENCHSTOPSeries
q
90A
80A
70A
60A
50A
40A
30A
20A
10A
0A
100Hz
TC=80°C
TC=110°C
Ic
Ic
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 10)
tp=2µs
10µs
10A
50µs
1A 1ms
DC 10ms
0,1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
160W
120W
80W
40W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function
of case temperature
(Tj 175C)
40A
30A
20A
10A
__ Icmax
--- max. current limited by bondwire
0A
25°C 50°C 75°C 100°C 125°C 150°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
4
Rev. 2.5 19.05.2015

4페이지










IGB30N60T 전자부품, 판매, 대치품
IGB30N60T
TRENCHSTOPSeries
q
5.0mJ
*) Eon and Ets include losses
due to diode recovery
4.0mJ
Ets* *) Eon and Ets include losses
due to diode recovery
Ets*
3 .0 m J
3.0mJ
2 .0 m J
E
off
2.0mJ
Eoff
1.0mJ
0.0mJ
0A
Eon*
10A 20A 30A 40A 50A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 10Ω,
Dynamic test circuit in Figure E)
1 .0 m J
Eon*
0 .0 m J

   
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
2.0mJ
*) Eon and Ets include losses
due to diode recovery
1.5mJ
Ets*
1.0mJ
Eoff
0.5mJ Eon*
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, rG = 10Ω,
Dynamic test circuit in Figure E)
3 .0 m J
*) E and E include losses
on ts
due to diode recovery
2 .5 m J
2 .0 m J
Ets*
1 .5 m J
1 .0 m J
0 .5 m J
E off
Eon*
0 .0 m J
300V 350V 400V 450V 500V 550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 30A, rG = 10Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
7
Rev. 2.5 19.05.2015

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