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PDF CJAC20N10 Data sheet ( Hoja de datos )
| Número de pieza | CJAC20N10 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJAC20N10 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFNWB5X6-8L Plastic-Encapsulate MOSFETS
CJAC20N10 N-Channel Power MOSFET
V(BR)DSS
10 9
RDS(on)MAX
31Pȍ#9
40Pȍ#9
ID
20$
PDFNWB5×6-8L
DESCRIPTION
This advanced high voltage MOSFET is designed to stand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as
power supplies, converters, power motor controls and bridge circuits.
FEATURES
High density cell design for ultra low RDS(on)
Special process technology for high ESD capability
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
Good stability and uniformity with high EAS
APPLICATIONS
Hard switched and high frequency circuits
Uninterruptible power supply
MARKING
CJAC1 = Part No.
Solid dot=Pin1 indicator
XXX= Code
Power switching application
EQUIVALENT CIRCUIT
D DDD
8 7 65
MAXIMUM RATINGS ( Ta=25ć unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
().0RXQWHG RQ D JODVV HSR[\ ERDUG RI PP [ PP [ PPW
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1 234
S S SG
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
100
±20
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-2,Jun,2016
1 page  
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5
A-2,Jun,2016
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJAC20N10.PDF ] | |
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