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BD41030HFN-C PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD41030HFN-C
기능 LIN Transceiver
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BD41030HFN-C 데이터시트, 핀배열, 회로
Datasheet
LIN Transceiver for Automotive
BD41030FJ-C BD41030HFN-C
General Description
BD41030FJ-C,BD41030HFN-C is the best transceiver
for BUS system which need LIN (Local Interconnect
Network) master and slave protocol.
BD41030FJ-C,BD41030HFN-C is low standby electricity
consumption in sleep mode.
BD41030FJ-C:SOP-J8
BD41030HFN-C:HSON8
Features
Compliant with LIN2.0,LIN2.1,LIN2.2,LIN2.2A
AEC-Q100 Qualified(Note 1)
Absolute maximum ratings of LIN pin is -27V to+40V
Max transmission rate 20kbps
Low Electro Magnetic Emission (EME)
High Electro Magnetic Immunity (EMI)
High impedance at power off for bus
Interface (RXD/TXD) with protocol layer
corresponds to 3.3V/5.0V logic.
Built-in terminator for LIN slave
Standby power consumption in sleep mode
Transmit data(TXD) dominant time-out function
Resistant to LIN-BAT/GND short-circuit
Built-in Thermal Shut Down(TSD)
(Note1:Grade1)
Key Specifications
Supply Voltage:
Supply Current (Sleep mode):
Supply Current:
(Standby mode; Recessive)
Supply Current:
(Normal mode; Recessive)
Supply Current:
(Normal mode; Dominant)
5V to 27V
1μA to 8μA
100μA to 1000μA
100μA to 1000μA
200μA to 2000μA
Package(s)
SOP-J8
W(Typ) x D(Typ) x H(Max)
4.90mm x 6.00mm x 1.65mm
HSON8
SOP-J8(BD41030FJ-C)
2.90mm x 3.00mm x 0.60mm
Applications
LIN communication for Automotive networks.
Typical Application Circuit(s)
HSON8(BD41030HFN-C)
100nF
2.4kΩ
VDD
Micro
Controller
GND
5V/3.3V
Regulator
EN
VIN
VECU
LIN
Bus line
100nF
Only
Master node
INH
BAT
RXD
BD41030FJ-C
TXDBD41030HFNNW-CAKE
10kΩ
33kΩ
NSLP
GND
LIN
(1)
1kΩ
(1) Master:C=1nF; Slave:C=220pF
Figure 1. Typical Application Circuit
Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
This product has no designed protection against radioactive rays
1/21
TSZ02201-0E2E0H500640-1-2
2016.08.18 Rev.002




BD41030HFN-C pdf, 반도체, 판매, 대치품
BD41030FJ-C BD41030HFN-C
Description of Block(s)
1. Sleep mode
In sleep mode, the transmit/receive function is not available and BD41030FJ-C is under the condition of low power
consumption mode. In this mode BD41030FJ-C shifts to sleep mode at startup of power supply (VBAT) when NSLP is “L”
or in normal mode also when pin NSLP is “L”.
During sleep mode, one of the following wake-up events triggers a shift of state:
Pin NWAKE H”→L(Shift to standby mode)
Pin LIN H→“L”→H(Shift to standby mode)
Pin NSLP L”→“H(Shift to normal mode)
The above-mentioned wake-up events shift the mode when a state remains for a given period of time (tNWAKE, tBUS,
tgotonorm). Hereinafter, a wake-up event on pin NWAKE is defined as Local wake-up, and a wake-up event on pin LIN is
defined as Remote wake-up.
2. Standby mode
When a wake-up event occurs on pin NWAKE or pin LIN in sleep mode, BD41030FJ-C shifts to standby mode.
In standby mode, pins become the following state:
Pin INH H(VBAT voltage)
Pin RXD L(Informs the microcontroller of being in standby mode.)
Pin LIN Slave resistor ON
BD41030FJ-C shifts from standby mode to normal mode when pin NSLP input switches to “H”.
3. Normal mode
BD41030FJ-C shifts to normal mode when pin NSLP switches to “H” in sleep mode or standby mode. In normal mode,
data can be transmitted or received through the bus line. When receiving data, the transceiver informs a LIN bus input
from pin RXD to the microcontroller. When transmitting data, the transceiver converts a TXD input signal to a
slew-rate-controlled LIN bus signal and informs the bus line of the converted signal. The maximum operating frequency
in this mode is 10 kHz.
From this mode, BD41030FJ-C shifts to sleep mode when pin NSLP input switches to “L” and this state remains for a
given period of time (tgotosleep).
unpower
state
*VPOR=reset Voltage
MODE
Sleep mode
Standby mode
Normal mode
VBAT>VPOR
and
NSLP=H : after L to H > tgotonorm
VBAT<VPOR
Standby mode
NSLP
RXD
INH
Termination
Transmitter
L
L
H (ON)
30kΩ
OFF
VBAT>VPOR
and
NSLP=L
VBAT<VPOR
NSLP=H : after L to H > tgotonorm
NWAKE=L : after H to L > tNWAKE
or
LIN=L to H : after LIN=L > tBUS
Normal mode
NSLP
RXD
INH
Termination
Transmitter
H
LIN bus data
H (ON)
30kΩ
ON
NSLP=H : after L to H > tgotonorm
NSLP=L : after H to L > tgotosleep while TXD=H
Sleep mode
NSLP
RXD
INH
Termination
Transmitter
L
Hi-z
Hi-z
Weak pullup
OFF
Figure 4. State Transition Chart
NSLP
L
L
H
Table 2. The state of the pin in each mode
TXD RXD
pull-down
Hi-z
pull-down
pull-down
L
Hrecessive state
Ldominant state
INH
Hi-z
H
H
TRANSMITTER
OFF
OFF
ON
Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
This product has no designed protection against radioactive rays
4/21
TSZ02201-0E2E0H500640-1-2
2016.08.18 Rev.002

4페이지










BD41030HFN-C 전자부품, 판매, 대치품
BD41030FJ-C BD41030HFN-C
Electrical Characteristics (Ta= -40 to +125°C; VBAT =5 to 27V; RL(LIN-BAT) =500Ω; typical values are given at
Ta=25°C; VBAT =12V; unless otherwise specified)
Parameter
Table 5. Electrical Characteristics
Symbol Min Typ Max
Unit
Conditions
BAT
Supply current 1 on pin BAT
(Sleep mode)
Supply current 2 on pin BAT
(Standby mode, Recessive)
Supply current 3 on pin BAT (Note 1)
(Standby mode, Dominant)
Supply current 4 on pin BAT
(Normal mode, Recessive)
Supply current 5 on pin BAT (Note 1)
(Normal mode, Dominant)
UVLO threshold voltage
IBAT1
IBAT2
IBAT3
IBAT4
IBAT5
VUVLO
138
100 400 1000
300 900 2000
100 400 1000
200 1000 2000
- - 4.9
Sleep mode.
VLIN = VBAT
μA VNWAKE = VBAT
VTXD = 0V
VNSLP = 0V
Standby mode.
VLIN = VBAT (bus: Recessive)
μA
VINH = VBAT
VNWAKE = VBAT
VTXD = 0V
VNSLP = 0V
Standby mode.
VBAT = 12V
VLIN = 0V (bus: Dominant)
μA VINH = VBAT
VNWAKE = VBAT
VTXD = 0V
VNSLP = 0V
Normal mode.
VLIN = VBAT (bus: Recessive)
μA
VINH = VBAT
VNWAKE = VBAT
VTXD = 5V
VNSLP = 5V
Normal mode.
VBAT = 12V (bus: Dominant)
μA
VINH = VBAT
VNWAKE = VBAT
VTXD = 0V
VNSLP = 5V
V
POR threshold voltage
VPOR
-
- 4.3 V
TXD
High level input voltage
VIH 2.0 - 7.0 V
Low level input voltage
VIL
-0.3
-
+0.8
V
Hysteresis voltage
Vhys
0.03
-
0.50 V
Pull-down resistor
Low level input current
RTXD 125 350 800 VTXD = 5V
IIL -5.0 0.0 +5.0 μA VTXD = 0V
NSLP
High level input voltage
VIH 2.0 - 7.0 V
Low level input voltage
VIL
-0.3
-
+0.8
V
Hysteresis voltage
Vhys
0.03
-
0.50 V
Pull-down resistor
RNSLP 125 350 800 VNSLP = 5V
Low level input current
IIL -5.0 0.0 +5.0 μA VNSLP = 0V
(Note 1) When VBAT is 12V or more, add to the circuit current the value calculated by the following expression because IBAT depends on pull-up resistor inside
LIN terminal.
I BAT(increase)
=
VBAT 12V
20k
(20kΩ is the minimum value of pull-up resistor inside LIN terminal)
Product structure : Silicon monolithic integrated circuit
.www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
This product has no designed protection against radioactive rays
7/21
TSZ02201-0E2E0H500640-1-2
2016.08.18 Rev.002

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부품번호상세설명 및 기능제조사
BD41030HFN-C

LIN Transceiver

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