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DG413 데이터시트 PDF




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부품번호 DG413 기능
기능 Precision Monolithic Quad SPST CMOS Analog Switches
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DG413 데이터시트, 핀배열, 회로
DG411, DG412, DG413
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (tON: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and military
applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411, DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FEATURES
Halogen-free according to IEC 61249-2-21
Definition
• 44 V supply max. rating
• ± 15 V analog signal range
• On-resistance - RDS(on): 25
• Fast switching - tON: 110 ns
• Ultra low power - PD: 0.35 µW
• TTL, CMOS compatible
• Single supply capability
Compliant to RoHS Directive 2002/95/EC
BENEFITS
Widest dynamic range
• Low signal errors and distortion
• Break-bevor-make switching action
• Simple interfacing
APPLICATIONS
• Precision automatic test equipment
• Precision data acquisition
• Communication systems
• Battery powered systems
• Computer peripherals
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC
IN1 1
D1 2
S1 3
V- 4
GND 5
S4 6
D4 7
IN4 8
16 IN2 Key
15 D2
14 S2
13 V+
12 VL
11 S3
10 D3
S1
V-
NC
GND
S4
4
5
6
7
8
9 IN3
Top View
DG411
LCC
D1 IN1 NC IN2 D2
3 2 1 20 19
9 10 11 12 13
D4 IN4 NC IN3 D3
Top View
18 S2
17 V+
16 NC
15 VL
14 S3
TRUTH TABLE
Logic
0
1
Logic “0” 0.8 V
Logic “1” 2.4 V
DG411
ON
OFF
DG412
OFF
ON
DG413
Dual-In-Line and SOIC
IN1 1
D1 2
S1 3
V- 4
GND 5
S4 6
D4 7
IN4 8
Key
16 IN2
15 D2 S1
14 S2 V-
13 V+
NC
12 VL
GND
11 S3
10 D3
S4
4
5
6
7
8
9 IN3
Top View
DG413
LCC
D1 IN1 NC IN2 D2
3 2 1 20 19
9 10 11 12 13
D4 IN4 NC IN3 D3
Top View
18 S2
17 V+
16 NC
15 VL
14 S3
TRUTH TABLE
Logic
0
1
Logic “0” 0.8 V
Logic “1” 2.4 V
SW1, SW4
OFF
ON
SW2, SW3
ON
OFF
Document Number: 70050
www.vishay.com
S11-1185-Rev. G, 13-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




DG413 pdf, 반도체, 판매, 대치품
DG411, DG412, DG413
Vishay Siliconix
SPECIFICATIONSa (for Unipolar Supplies)
Test Conditions
Parameter
Symbol
Unless Specified
V + = 12 V, V - = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Analog Switch
Analog Signal Rangee
VANALOG
Drain-Source
On-Resistance
RDS(on)
V + = 10.8 V,
IS = - 10 mA, VD = 3 V, 8 V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Power Supplies
tON RL = 300 , CL = 35 pF
tOFF VS = 8 V, see figure 2
tD
DG413 only, VS = 8 V
RL = 300 , CL = 35 pF
Q Vg = 6 V, Rg = 0 , CL = 10 nF
Positive Supply Current
I+
Negative Supply Current
Logic Supply Current
Ground Current
I-
IL
IGND
V + = 13.5 V, VIN = 0 V or 5 V
Temp.b
Typ.c
A Suffix
- 55 °C to 125 °C
Min.d Max.d
D Suffix
- 40 °C to 85 °C
Min.d Max.d
Unit
Full
Room
Full
40
12 12 V
80
100
80
100
Room
Hot
Room
Hot
Room
Room
175
95
25
25
250 250
400 315
125
140
125
140
ns
pC
Room 0.0001
1
1
Hot 5 5
Room - 0.0001 - 1
-1
Hot - 5 - 5
µA
Room 0.0001
1
1
Hot 5 5
Room - 0.0001
Hot
-1
-5
-5
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
45 TA = 25 °C
±5V
40
35
30
25
± 15 V
20
±8V
± 10 V
± 12 V
15
± 20 V
10
5
0
- 20 - 15 - 10 - 5 0 5 10 15 20
VD - Drain V oltage (V)
On-Resistance vs. VD and Power Supply Voltage
300
250
V+ = 3 V
VL = 3 V
200
VL = 5 V
150
V+ = 5 V
100
8V
50
12 V
15 V 20 V
0
0 2 4 6 8 10 12 14 16 18 20
VD - Drain Voltage (V)
On-Resistance vs. VD and Unipolar Supply Voltage
www.vishay.com
Document Number: 70050
4 S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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DG413 전자부품, 판매, 대치품
DG411, DG412, DG413
Vishay Siliconix
TEST CIRCUITS
+5V
VL
VS1 S1
IN1
VS2 S2
IN2
GND
+ 15 V
V+
D1
D2
VO2
VO1
RL1
300
CL1
35 pF
V-
RL2
300
CL2
35 pF
Logic
Input
Switch
Output
Switch
Output
- 15 V
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make (DG413)
3V
0V
VS1
VO1
0V
VS2
VO2
0V
50 %
90 %
90 %
tD
tD
Rg
Vg
3V
+5V
VL
S
IN
GND
+ 15 V
V+
D
V-
- 15 V
VO
VO
VO
CL
10 nF
INX
OFF
OFF
INX
ON OFF
ON
Q = VO x CL
OFF
INX dependent on switch configuration Input polarity determined
by sense of switch.
Figure 4. Charge Injection
+5V
C
+ 15 V
C
VS
Rg = 50
0 V, 2.4 V
NC
0 V, 2.4 V
XTA LK Isolation = 20 log
C = RF bypass
VS
VO
VL
S1
IN1
S2
IN2
GND
V+
D1
D2
V- C
- 15 V
Figure 5. Crosstalk
50
VO
RL
Document Number: 70050
www.vishay.com
S11-1185-Rev. G, 13-Jun-11
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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