(PDF) CJV01N65B Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	CJV01N65B
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	ZPSEMI
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No Preview Available ! CJV01N65B TO-92 Plastic-Encapsulate MOSFETS CJV01N65B N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-92 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGS ID IDM EAS PD RθJA TJ, TSTG TL Value 650 ±20 1 4 5 625 200 -55 ~+150 260 Unit V A mJ mW ℃/W ℃ [email protected] www.zpsemi.com 1 of 2 1 page

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PDF CJV01N65B Data sheet ( Hoja de datos )