74HCT1G08 Datasheet PDF - NXP Semiconductors
| Part Number | 74HCT1G08 | |
| Description | 2-input AND gate | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
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74HC1G08; 74HCT1G08
2-input AND gate
Rev. 04 — 17 July 2007
Product data sheet
1. General description
74HC1G08 and 74HCT1G08 are high-speed, Si-gate CMOS devices. They provide a
2-input AND function.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
The standard output currents are half those of the 74HC08 and 74HCT08.
2. Features
I Symmetrical output impedance
I High noise immunity
I Low power dissipation
I Balanced propagation delays
I SOT353-1 and SOT753 package options
3. Ordering information
Table 1. Ordering information
Type number
Package
Temperature range Name
74HC1G08GW
−40 °C to +125 °C TSSOP5
74HCT1G08GW
74HC1G08GV
−40 °C to +125 °C SC-74A
74HCT1G08GV
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface-mounted package; 5 leads
4. Marking
Version
SOT353-1
SOT753
Table 2. Marking codes
Type number
74HC1G08GW
74HCT1G08GW
74HC1G08GV
74HCT1G08GV
Marking
HE
TE
H08
T08
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NXP Semiconductors
74HC1G08; 74HCT1G08
2-input AND gate
Table 7. Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Min Typ Max Min
Max
ICC
∆ICC
CI
supply current
additional supply
current
input capacitance
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
- - 10
per input; VCC = 4.5 V to 5.5 V;
VI = VCC − 2.1 V; IO = 0 A
-
- 500
- 1.5 -
-
-
-
20
850
-
Unit
µA
µA
pF
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb = 25 °C. For test circuit see Figure 6
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ Max Min
Max
For type 74HC1G08
tpd propagation delay A and B to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V; CL = 50 pF
CPD power dissipation VI = GND to VCC
capacitance
[1]
-
-
-
-
[2] -
25 115
9 23
7-
8 20
19 -
-
-
-
-
-
135 ns
27 ns
- ns
23 ns
- pF
For type 74HCT1G08
tpd propagation delay A and B to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
CPD power dissipation VI = GND to VCC − 1.5 V
capacitance
[1]
-
-
[2] -
11 23
11 -
21 -
-
-
-
27 ns
- ns
- pF
[1] tpd is the same as tPLH and tPHL.
[2] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
∑ (CL × VCC2 × fo) = sum of outputs
74HC_HCT1G08_4
Product data sheet
Rev. 04 — 17 July 2007
© NXP B.V. 2007. All rights reserved.
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