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부품번호 | HCU70R1K5E 기능 |
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기능 | 700V N-Channel Super Junction MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
Jan 2016
HCU70R1K5E
700V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg)
Extremely low switching loss
Excellent stability and uniformity
100% Avalanche Tested
Key Parameters
Parameter
BVDSS @Tj,max
ID
RDS(on), Typ
Qg, Typ
Value
750
4
1.3
5.5
Unit
V
A
ȍ
nC
Application
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply (UPS)
Power Factor Correction (PFC)
TV power & LED Lighting Power
Package & Internal Circuit
I-PAK
TO-251A
TO-251A
(S/L)
TO-251B
(S/L)
GDS
GDS
GDS
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
TL
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Power Dissipation (TC = 25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
700
ρ30
4.0
2.5
12
80
28
-55 to +150
300
Units
V
V
A
A
A
mJ
W
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
4.4
110
Units
/W
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Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Note :
1. V = 0 V
GS
2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101
10 Ps
100 100 Ps
DC 1 ms
10-1
10-2
10-1
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
100 101
102
10 ms
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. ID = 2.0 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
4
3
2
1
0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
D=0.5
100 0.2
0.1
0.05
* Notes :
1. ZTJC(t) = 4.4 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.02
10-1 0.01
10-5
PDM
single pulse
10-4
10-3
10-2
t1
t2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
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4페이지 Package Dimension
pTwhrG
O{vTY\XhPG
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7페이지 | |||
구 성 | 총 9 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
HCU70R1K5E | 700V N-Channel Super Junction MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |