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PDF HRLO48N06H Data sheet ( Hoja de datos )
| Número de pieza | HRLO48N06H | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Dec 2016
HRLO48N06H
60V N-Channel Trench MOSFET
Features
High Speed Power Switching, Logic Level
Enhanced Body diode dv/dt capability
Enhanced Avalanche Ruggedness
100% UIS Tested, 100% Rg Tested
Lead free, Halogen Free
Application
Synchronous Rectification in SMPS
Hard Switching and High Speed Circuit
DC/DC in Telecoms and Industrial
Key Parameters
Parameter
BVDSS
ID
RDS(on), typ @10V
RDS(on), typ @4.5V
Value
60
21
3.8
4.8
Unit
V
A
mΩ
mΩ
Package & Internal Circuit
SOP-8
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
VGS
ID
IDM
EAS
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
TA = 25℃
TA = 100℃
Single Pulsed Avalanche Energy
L=1mH
Power Dissipation
TA = 25℃
TA = 70℃
Operating and Storage Temperature Range
60
±20
21
13
140
160
3.1
2.0
-55 to +150
Units
V
V
A
A
A
mJ
W
W
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJL Junction-to-Lead
Junction-to-Ambient (t≤10s)
RθJA
Junction-to-Ambient (steady state)
Typ.
--
--
--
Max.
23
40
75
Units
℃/W
℃/W
℃/W
◎ SEMIHOW REV.A0,December 2016
1 page  
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
BVDSS
IAS
EAS =
--1--
2
LL IAS2
ID (t)
DUT
VDD
tp
VDS (t)
Time
◎ SEMIHOW REV.A0,December 2016
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HRLO48N06H.PDF ] | |
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